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Abstract

This paper presents plan of wide fan-in door for low power and rapid tasks with decreased transistor check. In this work some circuital adjustments are done to diminish the quantity of stacked transistor among information and yield henceforth diminishing the deferral of the structured wide fan-in Or on the other hand, entryway. Additionally the normal power dispersal of the circuit is diminished as it has less number of exchanging hubs. The thought utilized in this system is the utilization of essential sense speaker for contrasting voltage created at the two terminals of the rationale square of structured circuit. This rationale square speaks to 8, 16, 32 furthermore, 64-information OR-door. The reenactments are accomplished for wide fan-in Or then again, entryways utilizing 90nm CMOS innovation display with supply voltage of 1V at 110 C of temperature at clock recurrence of 1GHz. The reenactment results got is thought about for 32-input or then again, door with standard voltage correlation based domino circuit for deferral, normal power and PDP which gives 2.5%, 6% and 9% enhancements over it separately.

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How to Cite
Sowmiya J, Subhananthi C, & Anitha R. (2019). Voltage Comparison Based High Speed and Low Power Domino Circuit for Wide Fan-In Gates . International Journal of Intellectual Advancements and Research in Engineering Computations, 7(1), 1220–1228. Retrieved from https://ijiarec.com/ijiarec/article/view/1112